KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...
A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...
TOKYO, JAPAN / ACCESSWIRE / December 22, 2023 / Power Diamond Systems, Inc. (PDS, Tokyo, JAPAN, CEO Tatsuya Fujishima), a leading innovator in the research and development of diamond semiconductor ...
CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...
SemiQ’s new 1200V modules in full-bridge packages are available in 20mΩ, 40mΩ, 80mΩ SiC MOSFETs categories. SemiQ’s high-performance 1200V SiC modules are tested to above 1400V and are designed to ...
There is ample evidence that organic field-effect transistors have reached a stage where they can be industrialized, analogous to standard metal oxide semiconductor (MOS) transistors. Monocrystalline ...
Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...
The reliability of typical SiC MOSFETs is degraded by increased On-resistance when its body diodes are bipolar energized [3] during reverse conduction operation [4]. Toshiba SiC MOSFETs alleviate this ...
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