Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...
Dublin, Nov. 02, 2022 (GLOBE NEWSWIRE) -- The "Global Metal Sputtering Target Material Market, by Type, by Application, Estimation & Forecast, 2017-2030" report has been added to ...
Wilmington, Delaware, Nov. 10, 2023 (GLOBE NEWSWIRE) -- Global Sputtering Target Material Market size is estimated at a market valued of US$ 1.4 billion in 2023 and is predicted to rise at a ...
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This video shows SemicoreEquipment's sputtering manufacturing process. This process starts when a substrate to be coated is placed in a vacuum chamber containing an inert gas. The negative charge is ...
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